Continuous Wave Operation of All-Epitaxial InP-Based 1.3μm VCSELs with 57% Differential Quantum Efficiency
نویسنده
چکیده
We demonstrate all-epitaxial InP-based 1.3μm VCSELs with a record-high continuous-wave differential quantum efficiency (57%) for single active region long-wavelength devices. Low-loss optical mode confinement is achieved through a selectively etched undercut tunnel-junction aperture. Single-mode continuous-wave lasing was observed up to 87°C and the room-temperature output power was 1.1mW at a current of 4.1mA and a wavelength of 1.305μm.
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